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TYPICAL PERFORMANCE CURVES
APT200GN60J APT200GN60J
600V
Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. * * * * * 600V Field Stop Trench Gate: Low VCE(on) Easy Paralleling 10s Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability
E G C
E
27 -2 T SO
"UL Recognized"
ISOTOP (R)
C G E
Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT200GN60J UNIT Volts
600 20 250 110 600 600A @600V 568 -55 to 150
Amps
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 3.2mA, Tj = 25C) MIN TYP MAX UNIT
600 5 1.05 5.8 1.45 1.65 1.15 1.19 4
2
6.5 1.85
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 200A, Tj = 25C) VCE(ON) Collector-Emitter On Voltage (VGE = 15V, I C = 200A, Tj = 125C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125C) I CES I GES RGINT Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
mA nA
1-2005 050-7610 Rev A
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
TBD 600 2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT200GN60J
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 100A TJ = 150C, R G = 5
7,
MIN
TYP
MAX
UNIT pF V nC
14100 4610 4000 8.2 1180 85 660
VGE =
VGE = 15V
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 600V VCC = 480V, VGE = 15V, TJ = 125C, R G = 5 7 Inductive Switching (25C) VCC = 400V VGE = 15V RG = 5 7 I C = 100A
600 10 55 20 1050 50 TBD 1720 2810 55 20 1150 60 TBD 1955 2865
A
s
ns
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC =400V VGE = 15V RG = 5 7 I C = 100A
J
ns
Turn-on Switching Energy (Diode)
66
TJ = +125C
J
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC VIsolation WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) RMS Voltage (50-60Hz Sinusoidal Package Weight
Wavefom from Terminals to Mounting Base for 1 Min.)
MIN
TYP
MAX
UNIT C/W Volts
.22 N/A 2500 1.03 29.2 10 1.1
oz gm Ib*in N*m
Torque
1 2 3
1-2005
Maximum Terminal & Mounting Torque
Repetitive Rating: Pulse width limited by maximum junction temperature. For Combi devices, ICES includes both IGBT and FRED leackage. See MIL-STD-750 Method 3471. Eon1 is the clamped inductive tun-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24) Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22) Eoff is the clamped induvtive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23) RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein.
4 5 6 7
050-7610
Rev A
TYPICAL PERFORMANCE CURVES
450 400 IC, COLLECTOR CURRENT (A) 350 300 250 200 150 100 50 0
15 & 10V
IC, COLLECTOR CURRENT (A)
450 400 350 300 250 200 150 100 50 0
APT200GN60J
15 & 10V
7.5V
7V
7.5V 7V
6.5V
6.5V
6V 5.5V 5V
6V 5.5V 5V
400 350 300 250 200 150 100
FIGURE 1, Output Characteristics(TJ = 25C)
250s PULSE TEST<0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 100A C T = 25C
J
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
VCE = 120V VCE = 300V
TJ = -55C
8 6 4 2 0 0 200
VCE = 480V
TJ = 25C TJ = 125C
50 0 0
2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V)
400 600 800 1000 1200 1400 GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 2.0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
2.5
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
2.0
IC = 200A
1.5
IC = 200A IC = 100A
1.5
IC = 100A
1.0
1.0
IC = 50A
IC = 50A
0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
0.5
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10
0
6
50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 300
0 25
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
250 200 150 100 50 0 -50
1.05
1.00
Limited by Package
0.95
050-7610
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90 -50
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
Rev A
1-2005
70 60 50 40 30 20 10 TJ = 25C, TJ =125C 25 45 65 85 105 125 145 165 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 5 60 50 tf, FALL TIME (ns) tr, RISE TIME (ns) 40 30 20
TJ = 25 or 125C,VGE = 15V RG = 5, L = 100H, VCE = 400V VCE = 400V RG = 5 L = 100 H
1200
td (OFF), TURN-OFF DELAY TIME (ns)
APT200GN60J
td(ON), TURN-ON DELAY TIME (ns)
1000
VGE =15V,TJ=125C
VGE = 15V
800 600 400 200 VCE = 400V RG = 5
VGE =15V,TJ=25C
0
25 45 65 85 105 125 145 165 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 5
0
L = 100 H
100
RG = 5, L = 100H, VCE = 400V
80
TJ = 125C, VGE = 15V
60
TJ = 25C, VGE = 15V
40
10 0
20
25 45 65 85 105 125 145 165 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 12000 EON2, TURN ON ENERGY LOSS (J) 10000 8000 6000 4000 2000 0
TJ = 25C,VGE =15V
65 85 105 125 145 165 25 45 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
0
G
TJ = 125C,VGE =15V
EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 5
12000 10000 8000 6000
= 400V V CE = +15V V GE R = 5
G
TJ = 25C, VGE = 15V
TJ = 125C, VGE = 15V
4000 2000 0
45 65 85 105 125 145 165 25 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 60000 SWITCHING ENERGY LOSSES (J) 50000 40000 30000 20000 Eon2,100A 10000 0 Eoff,50A 0
= 400V V CE = +15V V GE T = 125C
J
65 85 105 125 145 165 25 45 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
Eoff,150A SWITCHING ENERGY LOSSES (J)
7000 6000 5000 4000 3000 2000 1000 0 0
= 400V V CE = +15V V GE R = 5
G
Eoff,150A
Eon2,150A
Eon2,150A
Eoff,100A
Eoff,100A Eon2,100A Eoff,50A Eon2,50A
Rev A
1-2005
Eon2,50A
050-7610
50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
20,000 10,000 C, CAPACITANCE ( F) 5000 Cies IC, COLLECTOR CURRENT (A)
700 600 500 400 300 200 100
APT200GN60J
P
1000 500 C0es Cres 100
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.25
ZJC, THERMAL IMPEDANCE (C/W)
0.20
0.9
0.15
0.7
0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
RC MODEL
50 FMAX, OPERATING FREQUENCY (kHz)
Junction temp. (C) 0.0536 Power (watts) 0.169 Case temperature. (C) 0.353F 0.00826F
10
F
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
T = 125C J T = 75C C D = 50 % V = 400V CE R = 5
G
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
75 100 125 150 175 200 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
25
50
050-7610
Rev A
1-2005
APT200GN60J
APT100DQ60
10% td(on)
Gate Voltage TJ = 125C
V CC
IC
V CE
tr Collector Current 90%
A D.U.T.
5%
Switching Energy
10%
5% Collector Voltage
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST *DRIVER SAME TYPE AS D.U.T.
90% Gate Voltage
TJ = 125C
A V CE 100uH IC V CLAMP A DRIVER* D.U.T. B
Collector Voltage td(off) 90% tf 10%
0
Switching Energy
Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322)
W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594)
1.95 (.077) 2.14 (.084)
* Emitter
Collector
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
1-2005
30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Rev A
* Emitter Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
Gate
050-7610
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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